Superconducting group-IV semiconductors

Nature Materials

Volumn 8, Issue 5, 2009, Pages 375-382

  Blase, Xavier ^a,b   Bustarret, Etienne ^a,c   Chapelier, Claude ^d   Klein, Thierry ^a,e   Marcenat, Christophe ^d  

^a CNRS   (France)

^b UNIVERSITÉ LYON 1   (France)

^c UNIVERSITY OF CÁDIZ   (Spain)

^d CEA GRENOBLE   (France)

^e INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SUPERCONDUCTING DEVICES; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS;

BORON DOPED DIAMOND; COVALENT SEMICONDUCTORS; CRITICAL TEMPERATURES; DOPANT HOMOGENEITIES; DOPING CONCENTRATION; ELECTRONIC CORRELATION; GROUP-IV SEMICONDUCTORS; SPECIFIC PROPERTIES;

SEMICONDUCTOR DOPING;

EID: 65349176001     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2425     Document Type: Article

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