Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films

Physical Review Letters

Volumn 93, Issue 23, 2004, Pages

  Bustarret, E ^a   Kacmarcik J ^b,c   Marcenat, C ^b   Gheeraert, E ^a   Cytermann, C ^d   Marcus, J ^a   Klein, T ^a,e  

^a CNRS   (France)

^b CEA GRENOBLE   (France)

^c Centre of Low Temperature Physics Slovakia   (Slovakia)

^d TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^e INSTITUT UNIVERSITAIRE DE FRANCE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DENSITIES; BUFFER LAYERS; HOMOEPITAXIAL DIAMOND LAYERS; HYDROGEN PLASMA;

DEMAGNETIZATION; ION BEAMS; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVES; PHASE DIAGRAMS; SINGLE CRYSTALS; SUPERCONDUCTING TRANSITION TEMPERATURE;

DIAMOND FILMS;

EID: 42749107306     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.237005     Document Type: Article

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