Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 75-79

  Cammilleri, D ^a   Fossard, F ^a   Debarre D ^a   Tran Manh, C ^a   Dubois, C ^d   Bustarret, E ^c   Marcenat, C ^b   Achatz, P ^b,c   Bouchier, D ^a   Boulmer, J ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Boron; Germanium; GILD; Laser annealing; Laser doping; Phosphorus; Silicon; Superconductivity

Indexed keywords

ANNEALING; BORON; CONCENTRATION (PROCESS); CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; GERMANIUM; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LASER APPLICATIONS; LASERS; MASS SPECTROMETRY; PENETRATION DEPTH (SUPERCONDUCTIVITY); PHOSPHORUS; PULSED LASER APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SHEET RESISTANCE; SILICON; SUPERCONDUCTIVITY;

DEPTH PROFILES; DOPANT CONCENTRATIONS; DOPED FILMS; DOPED LAYERS; DOPED SIS; DOPING; EXCELLENT PERFORMANCES; GAS IMMERSION LASER DOPING; GE FILMS; GILD; JUNCTION DEPTHS; LASER ANNEALING; LASER ENERGY DENSITIES; PHOSPHORUS DOPING; SECONDARY IONS; SILICON-ON-INSULATOR;

NONMETALS;

EID: 54849415223     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.073     Document Type: Article

References (18)

1. Simoen E., Satta A., D'Amore A., Janssens T., Clarysse T., Martens K., De Jaeger B., Benedetti A., Hoflijk I., Brijs B., Meuris M., and Vandervorst W. Mater. Sci. Semicond. Process. 9 (2006) 634
2. Chui C.O., Gopalakrishnan K., Griffin P.B., Plummer J.D., and Saraswat K.C. Appl. Phys. Lett. 83 (2003) 3275
3. Chui C.O., Kulig L., Moran J., Tsai W., and Saraswat K.C. Appl. Phys. Lett. 87 (2005) 091909
4. Hernandez M., Venturini J., Zahorski D., Boulmer J., Débarre D., Kerrien K., Sarnet T., Laviron C., Séméria M.-N., Camel D., and Santailler J.-L. Appl. Surf. Sci. 208-209 (2003) 345
5. Venturini J., Hernandez M., Kerrien G., Laviron C., Camel D., Santailler J.L., Sarnet T., and Boulmer J. Thin Solid Films 453-454 (2004) 145
6. Heo S., Baek S., Lee D., Hassan M., Jung H., Lee J., and Hwang H. Electrochem. and Solid-State Lett. 9 (2006) G136
7. Huang J., Wu N., Zang Q., Zhu C., Tay A., Chen G., and Hong M. Appl. Phys. Lett. 87 (2005) 173507
8. Tsouroutas P., Tsoukalas D., Florakis A., Zergioti I., Serafetinides A.A., Cherkashin N., Martyn B., and Claverie A. Mater. Sci. Semicond. Process. 9 (2006) 644
9. Foulon F. In: Boyd I.W., and Jackman R.B. (Eds). Photochemical Processing of Electronic Materials (1992), Academic Press 257-295
10. Kramer K.-J., Talwar S., Carey P.G., Ishida E., Askenas A., Weiner K.H., and Sigmon T.W. Appl. Phys. A57 (1993) 91
11. Slaoui A., Deng C., Talwar S., Kramer K.-J., and Sigmon T.W. Appl. Phys. A59 (1994) 203
12. Kerrien G., Boulmer J., Débarre D., Bouchier D., Grouillet A., and Lenoble D. Appl. Surf. Sci. 186 (2002) 45
13. Kerrien G., Sarnet T., Débarre D., Boulmer J., Hernandez M., Laviron C., and Séméria M.-N. Thin Solid Films 453-454 (2004) 106
14. Hernandez M., Venturini J., Kerrien G., Sarnet T., Débarre D., Boulmer J., Laviron C., Camel D., Santailler J.-L., and Akhouayri H. Mater. Sci. Eng. B, Solid-State Mater. Adv. Technol. B114-115 (2004) 105
15. D. Cammilleri, F. Fossard, M. Halbwax, C. Tran Manh, D. Débarre, J. Boulmer, D. Bouchier, ICSI 5, May 12-25 2007, Marseille, France (to be published in the present issue of Thin Solid Films).
16. Kerrien G., Hernandez M., Laviron C., Sarnet T., Débarre D., Noguchi T., Zahorski D., Venturini J., Séméria M.-N., and Boulmer J. Appl. Surf. Sci. 208-209 (2003) 277-284
17. Sze S.M. Physics of Semiconductors (1969), Wiley-Interscience
18. Bustarret E., Marcenat C., Achatz P., Kacmarcik J., Lévy F., Huxley A., Ortéga L., Bourgeois E., Blase X., Débarre D., and Boulmer J. Nature 444 (2006) 465