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Volumn 58, Issue 19, 1998, Pages 12590-12593

Electronic signature of the pentagonal rings in silicon clathrate phases: Comparison with cluster-assembled films

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EID: 0037877536     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.12590     Document Type: Article
Times cited : (56)

References (30)
  • 2
    • 33744585064 scopus 로고
    • M.L. Cohen and J.R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, Springer Series in Solid-State Sciences Vol. 75 (Springer Verlag, Berlin, 1989), pp. 199-203, and references therein
    • Phys. Rev. BJ.D. JoannopoulosM.L. Cohen8, 2733 (1973);M.L. Cohen and J.R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, Springer Series in Solid-State Sciences Vol. 75 (Springer Verlag, Berlin, 1989), pp. 199-203, and references therein.
    • (1973) Phys. Rev. B , vol.8 , pp. 2733
    • Joannopoulos, J.1    Cohen, M.2
  • 6
    • 0009050979 scopus 로고
    • see also N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1971), p. 276;
    • R. Grigorovici and R. Manaila, Thin Solid Films 1, 343 (1968); see also N.F. Mott and E.A. Davis, Electronic Processes in Non-Crystalline Materials (Clarendon Press, Oxford, 1971), p. 276;
    • (1968) Thin Solid Films , vol.1 , pp. 343
    • Grigorovici, R.1    Manaila, R.2
  • 8
    • 4244206133 scopus 로고    scopus 로고
    • Examples for the role of odd-member rings in the stability and mobility of core dislocations in Si-diamond may be found in J. Bennetto, R.W. Nunes, and D. Vanderbilt, Phys. Rev. Lett. 79, 245 (1997), and references therein.
    • (1997) Phys. Rev. Lett. , vol.79 , pp. 245
    • Bennetto, J.1    Nunes, R.2    Vanderbilt, D.3
  • 13
  • 14
  • 21
    • 36149016819 scopus 로고
    • We use the so-called “GW” approximation for the self-energy as originally introduced by Hedin [L. Hedin, Phys. Rev. 139, A796 (1965)].
    • (1965) Phys. Rev. , vol.139 , pp. A796
    • Hedin, L.1
  • 22
    • 25544479230 scopus 로고
    • This approach has been shown to yield band gap of bulk and surfaces semiconductors accurate to within 0.1 eV as compared to experiment. Technical details can be found in M. Hybertsen and S.G. Louie, Phys. Rev. B 34, 5390 (1986).
    • (1986) Phys. Rev. B , vol.34 , pp. 5390
    • Hybertsen, M.1    Louie, S.2
  • 23
    • 0000968270 scopus 로고
    • Phys. Rev. BX. Blase, X. Zhu, and S.G. Louie, 49, 4973 (1993). More detailed results will be given in a subsequent paper.
    • (1993) Phys. Rev. B , vol.49 , pp. 4973
    • Blase, X.1    Zhu, X.2    Louie, S.3


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