Interface states at the SiO2/4H-SiC(0001) interface from first-principles: Effects of Si-Si bonds and of nitrogen atom termination

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 573-576

  Ohnuma, T ^a   Tsuchida, H ^a   Jikimoto, T ^a   Miyashita, A ^b   Yoshikawa, M ^b  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

First principles calculations; Interface states; Nitrogen annealing

Indexed keywords

DANGLING BONDS; INTERFACES (MATERIALS); NITROGEN; VALENCE BANDS;

FIRST-PRINCIPLES CALCULATIONS; INTERFACE STATES; NITROGEN ANNEALING;

SILICA;

EID: 35148887683     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.573     Document Type: Conference Paper

References (6)

1. J. A. Cooper, Jr., Phys. Stat. Sol. (a) 162 (1997) 305
2. J. Tan, M. K. Das, J. A. Cooper, Jr., and M. R. Melloch, Appl. Phys. Lett. 70 (1997) 2280
3. J. N. Shenoy, G. L. Chindalore, M.R. Melloch, J. A. Cooper, Jr., J. W. Palmour, and K.G. Irvine, J. Electron. Mater. 24 (1995) 303
4. T. Ohnuma, H. Tsuchida, and T. Jikimoto, Mater. Sci. Forum Vol. 457-460 (2003) 1297
5. G. Kresse and J. Furthmüller, Phys. Rev. B 54 (1996) 11169
6. H. Yano, Y. Frumoto, T. Niwa, T. Hatayama, Y. Uraoka, and T. Fuyuki, Mater. Sci. Forum Vol. 457-460 (2003), p. 1333