Deep levels in n -type AlGaN grown by hydride vapor-phase epitaxy on sapphire characterized by deep-level transient spectroscopy

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Osaka, J ^a   Ohno, Y ^a   Kishimoto, S ^a   Maezawa, K ^a   Mizutani, T ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DOPING (ADDITIVES); ELECTRON TRAPS; FILM GROWTH; GALLIUM NITRIDE; GROWTH KINETICS; HYDRIDES; POINT DEFECTS; SAPPHIRE; VAPOR PHASE EPITAXY;

GAN; HYDRIDE VAPOR-PHASE EPITAXY; MOLE FRACTION; N-TYPE ALGAN;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 27944470004     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2137901     Document Type: Article

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