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Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

Epitaxial film growth and optoelectrical properties of layered semiconductors, LaMnXO (X=P, As, and Sb)

(5) Kayanuma, Kentaro a Hiramatsu, Hidenori a Kamiya, Toshio a Hirano, Masahiro a Hosono, Hideo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAPS; CRYSTALLINITY; DENSITY-FUNCTIONAL CALCULATIONS; EPITAXIAL FILM GROWTHS; ISOSTRUCTURAL COMPOUNDS; LAYERED SEMICONDUCTORS; OPTICAL ABSORPTION MEASUREMENTS; OPTOELECTRICAL PROPERTIES; P-TYPE SEMICONDUCTORS; PHASE SEGREGATIONS; POSTDEPOSITION THERMAL ANNEALING; PULSED LASERS; SILICA GLASS; THERMOPOWER;

ANTIMONY COMPOUNDS; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL FILMS; EPITAXIAL GROWTH; PHASE SEPARATION; PULSED LASER DEPOSITION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICA;

FILM GROWTH;

EID: 65249101234 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3093685 Document Type: Article

Times cited : (36)

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