Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Yanagi, Hiroshi ^a   Ohno, Shuichi ^a   Kamiya, Toshio ^a   Hiramatsu, Hidenori ^a   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FERROMAGNETISM; HOLE MOBILITY; LANTHANUM COMPOUNDS; MAGNETIZATION; SEMICONDUCTOR DOPING; THIN FILMS; X RAY DIFFRACTION;

DEGENERATE CONDUCTION; DILUTE MAGNETIC SEMICONDUCTOR (DMS); LACUOSE; P TYPE SEMICONDUCTOR;

SEMICONDUCTING MANGANESE COMPOUNDS;

EID: 33747345918     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219693     Document Type: Article

References (24)

1. H. Ohno, A. Shen, F. Matsukura, A. Oiwa, A. Endo, S. Katsumoto, and Y. Iye, Appl. Phys. Lett. 69, 363 (1996).
2. D. Chiba, K. Takamura, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 82, 3020 (2003).
3. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
4. H. L. Hartnagel, A. L. Dawar, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films (IOP, Bristol, 1995).
5. K. A. Griffin, A. B. Pakhomov, C. M. Wang, S. M. Heald, and K. M. Krishnan, Phys. Rev. Lett. 94, 157204 (2005).
6. M. Ivill, S. J. Pearton, D. P. Norton, J. Kelly, and A. F. Hebard, J. Appl. Phys. 97, 053904 (2005).
7. A. Kaminski and S. Das Sarma, Phys. Rev. Lett. 88, 247202 (2002).
8. J. M. D. Coey, M. Venkatesan, and C. B. Fitzgerald, Nat. Mater. 4, 173 (2005).
9. K. Ueda and H. Hosono, J. Appl. Phys. 91, 4768 (2002).
10. H. Hiramatsu, K. Ueda, H. Ohta, M. Hirano, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 82, 1048 (2003).
11. H. Ohta, K. Nomura, M. Orita, M. Hirano, K. Ueda, T. Suzuki, Y. Ikuhara, and H. Hosono, Adv. Fund. Mater. 13, 139 (2003).
12. H. Hiramatsu, K. Ueda, H. Ohta, M. Orita, M. Hirano, and H. Hosono, Appl. Phys. Lett. 81, 598 (2002).
13. T. Fukumura, H. Toyosaki, and Y. Yamada, Semicond. Sci. Technol. 20, S103 (2005).
14. Y. Matsumoto et al, Science 291, 854 (2001).
15. D. H. Kim et al, J. Appl. Phys. 93, 6125 (2003).
16. S. R. Shinde et al., Phys. Rev. Lett. 92, 166601 (2004).
17. S. A. Chambers, S. M. Heald, and T. Droubay, Phys. Rev. B 67, 100401 (2003).
18. H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, and M. Kawasaki, Nat. Mater. 3, 221 (2004).
19. M. Murakami et al, J. Appl. Phys. 95, 5330 (2004).
20. S. A. Chambers, C. M. Wang, S. Thevuthasan, T. Droubay, D. E. McCready, A. S. Lea, V. Shutthanandan, and C. F. Windisch, Jr., Thin Solid Films 418, 197 (2002).
21. H. Hiramatsu et al., Cryst. Growth Des. 4, 301 (2004).
22. -3. However, this estimated value seems smaller than the measured hole concentration and 100% ionization efficiency is unrealistic. It is possible that Mn doping induces the formation of Cu vacancies, which generates more holes.
23. J. Geck, B. Buchner, M. Hucker, R. Klingeler, and R. Gross, Phys. Rev. B 64, 144430 (2001).
24. K. Dwight and N. Menyuk, Phys. Rev. 119, 1470 (1960).