Properties and field emission characteristics of Ga:ZnO whiskers

Journal of the Ceramic Society of Japan

Volumn 117, Issue 1364, 2009, Pages 508-514

  Ueda, Yoshikazu ^a   Yoshida, Kazuo ^a   Saitoh, Hidetoshi ^b  

^a ASAHI KASEI CORPORATION   (Japan)

^b NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

CVD; Dopant; Field emission; SEM; Whisker; X ray diffraction; ZnO

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLITES; DOPING (ADDITIVES); ELECTRIC FIELDS; FIELD EMISSION; GALLIUM; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ATMOSPHERIC CHEMICAL VAPOR DEPOSITIONS; C-AXIS ORIENTATIONS; FIELD-EMISSION CHARACTERISTICS; RADII OF CURVATURE; RADIUS OF CURVATURE; SINGLE CRYSTALLINE SILICON; WHISKER; ZNO WHISKERS;

ZINC OXIDE;

EID: 65249096035     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.117.508     Document Type: Article

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