Epitaxial growth of zinc oxide whiskers by chemical-vapor deposition under atmospheric pressure

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 5 B, 1999, Pages

  Satoh, Minoru ^a   Tanaka, Norio ^a   Ueda, Yoshikazu ^a   Ohshio, Shigeo ^a   Saitoh, Hidetoshi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTAL ORIENTATION; CRYSTAL WHISKERS; EPITAXIAL GROWTH; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY; ZINC OXIDE;

FULL WIDTH AT HALF MAXIMUM (FWHM);

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032677980     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l586     Document Type: Article

References (5)