The electron transfer behavior of the hydrogen-terminated boron-doped diamond film electrode

Materials Chemistry and Physics

Volumn 115, Issue 2-3, 2009, Pages 590-598

  Jiadao, Wang ^a   Fengbin, Liu ^a   Haosheng, Chen ^a   Darong, Chen ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Electrochemical properties; Electronic structure; Surfaces; Thin films

Indexed keywords

AB INITIO METHODS; AC-IMPEDANCE SPECTROSCOPIES; BAND GAPS; BORON ATOMS; BORON-DOPED DIAMOND FILMS; DIAMOND ELECTRODES; ELECTROCHEMICAL WINDOWS; ELECTROLYTIC SOLUTIONS; ELECTRON TRANSFER BEHAVIORS; ELECTRON TRANSFERS; EXPERIMENTAL DATUM; FILM RESISTANCES; H BONDINGS; HYDROGEN-TERMINATED DIAMONDS; HYDROGENATED DIAMONDS; INTERFACE STRUCTURES; SCANNING PROBES; SURFACE ADSORBATES; SURFACE CARBONS; SURFACE HYDROGENS;

ATOMS; BORON; CYCLIC VOLTAMMETRY; DIAMOND CUTTING TOOLS; DIAMONDS; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMICAL PROPERTIES; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROGEN; HYDROGENATION; PROBES; SCANNING; SCANNING ELECTRON MICROSCOPY; SCANNING PROBE MICROSCOPY; SURFACE PROPERTIES; THIN FILMS;

DIAMOND FILMS;

EID: 64749084844     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2008.12.033     Document Type: Article

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