Thermal stability improvement of NiSi on gate by high dosage Germanium implantation

Electrochemical and Solid-State Letters

Volumn 12, Issue 6, 2009, Pages

  Hsieh, Chih Ming ^a   Tsui, Bing Yue ^a   Hung, Yu Ren ^a   Yang, York ^b   Shen, Ryan ^b   Cheng, Sam ^b   Lin, Tony ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Advanced Ion Beam Technology Company   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; NICKEL SILICIDES; POLY-SI GATES; PROCESS TEMPERATURES; RESEARCH TOPICS; SCANNING ELECTRON MICROSCOPES; THERMAL STABILITIES; THIN-FILM; X- RAY DIFFRACTIONS;

AGGLOMERATION; CHARGE COUPLED DEVICES; GERMANIUM; ION BOMBARDMENT; ION IMPLANTATION; METALLIC COMPOUNDS; MOS DEVICES; NICKEL OXIDE; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SILICIDES;

THERMODYNAMIC STABILITY;

EID: 64549121575     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3115403     Document Type: Article

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