Ge-dependent morphological change in poly-SiGe formed by Ni-mediated crystallization

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 227-230

  Sadoh, T ^a   Kanno, H ^a   Kenjo, A ^a   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Metal induced lateral crystallization; Poly SiGe; Solid phase growth; Thin film transistor

Indexed keywords

ANNEALING; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; MORPHOLOGY; NICKEL; OPTICAL MICROSCOPY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THIN FILM TRANSISTORS; ULSI CIRCUITS;

METAL-INDUCED LATERAL CRYSTALLIZATION (MILC); POLY-SIGE; SOLID-PHASE GROWTH;

SILICON COMPOUNDS;

EID: 1142304514     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.08.050     Document Type: Conference Paper

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