Irregular increase in sheet resistance of Ni silicides at temperature range of transition from NiSi to NiSi2

Extended Abstracts of the Sixth International Workshop on Junction Technology, IWJT '06

Volumn , Issue , 2006, Pages 188-191

  Tsutsui, Kazuo ^a   Ruifei, Xiang ^a   Nagahiro, Koji ^a   Shiozawa, Takashi ^a   Ahmet, Parhat ^a   Okuno, Yasutoshi ^b   Matsumoto, Michikazu ^b   Kubota, Masafumi ^b   Kakushima, Kuniyuki ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DURATION TIME; RAMPING RATE; TEMPERATURE RANGE; TRANSFORMATION CURVES;

AGGLOMERATION; DEGRADATION; NICKEL COMPOUNDS; PHASE TRANSITIONS; SHEET RESISTANCE; THERMODYNAMIC STABILITY;

SILICIDES;

EID: 34250212898     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. H. Iwai, T. Ohguro, S. Ohmi, Microelectron. Eng. 60 (2002) 157.
2. F. F. Zhao et al., Microelectronic Engineering 71 (2004) 104.