Theoretical study of hydrogenated 3C-SiC(0 0 1)-(2×1) surface

Surface Science

Volumn 571, Issue 1-3, 2004, Pages 21-30

  Peng, Xiangyang ^a   Ye, Ling ^a   Wang, Xun ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Adatoms; Density functional calculations; Hydrogen atom; Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

BINDING ENERGY; DIMERS; ELECTRONIC DENSITY OF STATES; HYDROGENATION; PHOTOEMISSION; PROBABILITY DENSITY FUNCTION; SILICON CARBIDE; SURFACE STRUCTURE; THERMAL CONDUCTIVITY;

ADATOMS; ATOMIC STRUCTURES; PARTIAL DENSITY OF STATES (PDOS); SURFACE RELAXATION AND RECONSTRUCTION;

SURFACE TREATMENT;

EID: 6444238784     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.173     Document Type: Article

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