Si and H adsorption on the silicon terminated β-SiC(001) surface: An ab initio study

Materials Science and Engineering: B

Volumn 96, Issue 2, 2002, Pages 132-136

  Catellani, Alessandra ^a   Pizzagalli, Laurent ^b   Galli, Giuali ^c  

^a CNR   (Italy)

^b SP2MI   (France)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Chemisorption; Density functional calculations; Hydrogen atom; Silicon carbide; Surface relaxation and reconstruction

Indexed keywords

ADSORPTION; CHEMISORPTION; COMPUTER SIMULATION; HYDROGEN; HYDROGENATION; MOLECULAR DYNAMICS; PROBABILITY DENSITY FUNCTION; STOICHIOMETRY; STRAIN; SURFACE PHENOMENA;

SURFACE RELAXATION;

SILICON CARBIDE;

EID: 0036841433     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00303-3     Document Type: Conference Paper

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