Metal-ferroelectric-insulator-semiconductor (MFIS) devices based on DyScO3 buffer layer and ferroelectric Bi3.25Nd 0.75Ti3O12 thin film

ECS Transactions

Volumn 13, Issue 2, 2008, Pages 363-371

  Thomas, R ^a   Pradhan, D K ^a   Melgarejo, R E ^a   Saavedra Arias, J J ^a   Karan, N K ^a   Palai, R ^a   Murari, N M ^a   Katiyar, R S ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

[No Author keywords available]

Indexed keywords

CV HYSTERESISES; DIELECTRIC CONSTANTS; LINEAR DIELECTRICS; LOSS TANGENTS; MEMORY WINDOWS; MFIS CAPACITORS; NONVOLATILE RAMS; REMNANT POLARIZATIONS; SEMI-CONDUCTORS; SI SUBSTRATES; ZERO FIELDS;

ADMINISTRATIVE DATA PROCESSING; AMORPHOUS FILMS; AMORPHOUS SILICON; BLOOD VESSEL PROSTHESES; BUFFER LAYERS; DATA STORAGE EQUIPMENT; DIELECTRIC DEVICES; DIELECTRIC FILMS; DIELECTRIC MATERIALS; FERROELECTRICITY; GROWTH (MATERIALS); LEAKAGE CURRENTS; MATERIALS; MATERIALS SCIENCE; METAL INSULATOR BOUNDARIES; METALS; NANOSYSTEMS; NEODYMIUM; OPTICAL WAVEGUIDES; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICES; SILICON; SILICON COMPOUNDS; SUBSTRATES; SWITCHING CIRCUITS; THICK FILMS;

FERROELECTRIC FILMS;

EID: 55849105237     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2908649     Document Type: Conference Paper

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