SiGe nanorings by ultrahigh vacuum chemical vapor deposition

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Lee, C H ^a   Shen, Y Y ^a   Liu, C W ^a,b   Lee, S W ^c   Lin, B H ^d,e   Hsu, C H ^d,e  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^e Institute of Electro Optical Engineering   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DIAMETERS; CAP THICKNESS; IN-SITU ANNEALING; OUT DIFFUSIONS; QUANTUM DOTS; ULTRA-HIGH VACUUM CHEMICAL VAPOR DEPOSITIONS; X- RAY DIFFRACTIONS;

CHEMICAL VAPOR DEPOSITION; GERMANIUM; NANORINGS; PIEZOELECTRIC ACTUATORS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON ALLOYS; ULTRAHIGH VACUUM; VACUUM DEPOSITION; VAPORS;

NANOSTRUCTURED MATERIALS;

EID: 64349094632     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116619     Document Type: Article

References (16)

1. J. M. Garcia, G. Medeiros-Ribeiro, K. Schmidt, T. Ngo, J. L. Feng, A. Lorke, J. Kotthaus, and P. M. Petroff, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.119772 71, 2014 (1997).
2. D. Granados and J. M. Garcia, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1566799 82, 2401 (2003).
3. J. -H. Dai, Y. -L. Lin, and S. -C. Lee, IEEE Photonics Technol. Lett. IPTLEL 1041-1135 10.1109/LPT.2007.903344 19, 1511 (2007).
4. R. J. Warburton, C. Schulhauser, D. Haft, C. Schäflein, K. Karrai, J. M. Garcia, W. Schoenfeld, and P. M. Petroff, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.65.113303 65, 113303 (2002).
5. A. Lorke, R. J. Luyken, A. O. Govorov, J. P. Kotthaus, J. M. Garcia, and P. M. Petroff, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.84.2223 84, 2223 (2000).
6. S. W. Lee, L. J. Chen, P. S. Chen, M. -J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1635073 83, 5283 (2003).
7. M. H. Liao, C. -H. Lee, T. -A. Hung, and C. W. Liu, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2777686 102, 053520 (2007).
8. T. I. Kamins, E. C. Carr, R. S. Willams, and S. J. Rosner, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.364084 81, 211 (1997).
9. A. Lorke, R. J. Luyken, J. M. Garcia, and P. M. Petroff, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.40.1857 40, 1857 (2001).
10. L. Huang, F. Liu, G. -H. Lu, and X. G. Gong, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.96.016103 96, 016103 (2006).
11. E. Chason, T. M. Mayer, B. K. Kellerman, D. T. Mcllroy, and A. J. Howard, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.72.3040 72, 3040 (1994).
12. G. L. McVay and A. R. DuCharme, Phys. Rev. B PLRBAQ 0556-2805 9, 627 (1974). 10.1103/PhysRevB.9.627
13. H. Liu and R. Huang, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1928311 97, 113537 (2005).
14. M. De Seta, G. Capellini, L. Di Gaspare, F. Evangelisti, and F. D'Acapito, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2362929 100, 093516 (2006).
15. J. M. Hartmann, B. Gallas, J. Zhang, and J. J. Harris, Semicond. Sci. Technol. SSTEET 0268-1242 10.1088/0268-1242/15/4/311 15, 370 (2000).
16. A. Marzegalli, V. A. Zinovyev, F. Montalenti, A. Rastelli, M. Stoffel, T. Merdzhanova, O. G. Schmidt, and L. Miglio, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.99.235505 99, 235505 (2007).