-
1
-
-
7744238637
-
Multicolor InGaAs quantum-dot infrared photodetectors
-
Nov.
-
S. M. Kim and J. S. Harris, “Multicolor InGaAs quantum-dot infrared photodetectors,” IEEE Photon. Technol. Lett., vol. 16, no. 11, pp. 2538–2540, Nov. 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.11
, pp. 2538-2540
-
-
Kim, S.M.1
Harris, J.S.2
-
2
-
-
22144488486
-
Voltage tunable superlattice infrared detector for mid and long-wavelength detection
-
A. Majumdar, K. K. Choi, J. L. Reno, and D. C. Tsui, “Voltage tunable superlattice infrared detector for mid and long-wavelength detection,” Appl. Phys. Lett., vol. 86, pp. 261110–261112, 2005.
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 261110-261112
-
-
Majumdar, A.1
Choi, K.K.2
Reno, J.L.3
Tsui, D.C.4
-
3
-
-
31544478523
-
High-performance narrow-bandwidth multi-color InAs/AlGaAs/GaAs quantum dot infrared photodetector
-
S. D. Chen, Y. Y. Chen, and S. C. Lee, “High-performance narrow-bandwidth multi-color InAs/AlGaAs/GaAs quantum dot infrared photodetector,” Jpn. J. Appl. Phys., vol. 44, pp. 6307–6311, 2005.
-
(2005)
Jpn. J. Appl. Phys.
, vol.44
, pp. 6307-6311
-
-
Chen, S.D.1
Chen, Y.Y.2
Lee, S.C.3
-
4
-
-
24344489072
-
Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors
-
S. D. Chen, Y. Y. Chen, and S. C. Lee, “Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors,” Appl. Phys. Lett., vol. 86, pp. 2531041–2531043, 2005.
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 2531041-2531043
-
-
Chen, S.D.1
Chen, Y.Y.2
Lee, S.C.3
-
5
-
-
1942443633
-
The effect of silicon dopant on the performance of InAs/GaAs quantum-dot infrared photodetectors
-
S. Y. Lin, Y. J. Tsai, and S. C. Lee, “The effect of silicon dopant on the performance of InAs/GaAs quantum-dot infrared photodetectors,” Jpn. J. Appl. Phys., vol. 42, pp. L167-L169, 2004.
-
(2004)
Jpn. J. Appl. Phys.
, vol.42
, pp. L167-L169
-
-
Lin, S.Y.1
Tsai, Y.J.2
Lee, S.C.3
-
6
-
-
33645844288
-
High-temperature operation normal incident 256 x 256 InAs-GaAs quantum-dot infrared photodetector focal plane array
-
Apr. 15
-
S. F. Tang, C. D. Chiang, P. K. Weng, Y. T. Gau, J. J. Luo, S. T. Yang, C. C. Shih, S. Y. Lin, and S. C. Lee, “High-temperature operation normal incident 256 x 256 InAs-GaAs quantum-dot infrared photodetector focal plane array,” IEEE Photon. Technol. Lett., vol. 18, no. 8, pp. 986–988, Apr. 15, 2006.
-
(2006)
IEEE Photon. Technol. Lett.
, vol.18
, Issue.8
, pp. 986-988
-
-
Tang, S.F.1
Chiang, C.D.2
Weng, P.K.3
Gau, Y.T.4
Luo, J.J.5
Yang, S.T.6
Shih, C.C.7
Lin, S.Y.8
Lee, S.C.9
-
7
-
-
31944447692
-
Quantum-well infrared photodetector with voltage-switchable quadratic and linear response
-
T. Maier, H. Schneider, H. C. Liu, M. Walther, and P. Koidl, “Quantum-well infrared photodetector with voltage-switchable quadratic and linear response,” Appl. Phys. Lett., vol. 88, pp. 051117-051119,2006.
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 051117-051119
-
-
Maier, T.1
Schneider, H.2
Liu, H.C.3
Walther, M.4
Koidl, P.5
-
8
-
-
20844442627
-
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
-
P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa, and A. G. U. Perera, “Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature,” Appl. Phys. Lett., vol. 86, pp. 191061–191063, 2005.
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 191061-191063
-
-
Bhattacharya, P.1
Su, X.H.2
Chakrabarti, S.3
Ariyawansa, G.4
Perera, A.G.U.5
-
9
-
-
0001734716
-
A four-color quantum well infrared photodetector
-
M. Z. Tidrow, X. Jiang, S. S. Li, and K. Bacher, “A four-color quantum well infrared photodetector,” Appl. Phys. Lett., vol. 74, pp. 1335–1337, 1999.
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1335-1337
-
-
Tidrow, M.Z.1
Jiang, X.2
Li, S.S.3
Bacher, K.4
-
10
-
-
0035267452
-
Growth and electronic properties of self-Organized quantum rings
-
A. Lorke, R. J. Luyken, J. M. Garcia, and P. M. Petroff, “Growth and electronic properties of self-Organized quantum rings,” Jpn. J. Appl. Phys., vol. 40, pp. 1857–1859, 2001.
-
(2001)
Jpn. J. Appl. Phys.
, vol.40
, pp. 1857-1859
-
-
Lorke, A.1
Luyken, R.J.2
Garcia, J.M.3
Petroff, P.M.4
-
11
-
-
0038665312
-
In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy
-
D. Granados and J. M. Garcia, “In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy,” Appl. Phys. Lett., vol. 82, pp. 2401–2403, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 2401-2403
-
-
Granados, D.1
Garcia, J.M.2
-
12
-
-
2342464302
-
Laser devices with stacked layers of InGaAs/GaAs quantum rings
-
F. Suarez, D. Granados, M. L. Dotor, and J. M. Garcia, “Laser devices with stacked layers of InGaAs/GaAs quantum rings,” Nanotechnology, vol. 15, pp. S126-S130, 2004.
-
(2004)
Nanotechnology
, vol.15
, pp. S126-S130
-
-
Suarez, F.1
Granados, D.2
Dotor, M.L.3
Garcia, J.M.4
-
13
-
-
28344442498
-
Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs
-
P. Offermans, P. M. Koenraad, J. H. Wolter, D. Granados, J. M. Garcia, V. M. Fomin, V. N. Gladilin, and J. T. Devreese, “Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs,” Appl. Phys. Lett., vol. 87, pp. 131902–131904, 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 131902-131904
-
-
Offermans, P.1
Koenraad, P.M.2
Wolter, J.H.3
Granados, D.4
Garcia, J.M.5
Fomin, V.M.6
Gladilin, V.N.7
Devreese, J.T.8
-
14
-
-
0041511895
-
Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
-
S. Y. Lin, Y. R. Tsai, and S. C. Lee, “Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors,” Appl. Phys. Lett., vol. 83, pp. 752–754, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 752-754
-
-
Lin, S.Y.1
Tsai, Y.R.2
Lee, S.C.3
-
15
-
-
0041971221
-
Normal-incidence, high-temperature, midinfrared, InAs-GaAs vertical quantum-dot infrared photodetector
-
Nov.
-
A. D. Stiff, S. Krishna, P. Bhattacharya, and S. W. Kennerly, “Normal-incidence, high-temperature, midinfrared, InAs-GaAs vertical quantum-dot infrared photodetector” IEEE J. Quantum Electron., vol. 37, no. 11, pp. 1412–1419, Nov. 2001.
-
(2001)
IEEE J. Quantum Electron.
, vol.37
, Issue.11
, pp. 1412-1419
-
-
Stiff, A.D.1
Krishna, S.2
Bhattacharya, P.3
Kennerly, S.W.4
-
16
-
-
22244489704
-
Characteristics of InGaAs quantum dot infrared photodetectors
-
S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, S. Wang, and X. G. Xie, “Characteristics of InGaAs quantum dot infrared photodetectors” Appl. Phys. Lett., vol. 73, pp. 3153–3155, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3153-3155
-
-
Xu, S.J.1
Chua, S.J.2
Mei, T.3
Wang, X.C.4
Zhang, X.H.5
Karunasiri, G.6
Fan, W.J.7
Wang, C.H.8
Jiang, J.9
Wang, S.10
Xie, X.G.11
-
17
-
-
79955992126
-
0.85As dots-in-a-well detector
-
0.85As dots-in-a-well detector,” Appl. Phys. Lett., vol. 81, pp. 1369–1371, 2002.
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 1369-1371
-
-
Raghavan, S.1
Rotella, P.2
Stintz, A.3
Fuchs, B.4
Krishna, S.5
Morath, C.6
Cardimona, D.A.7
Kennerly, S.W.8
-
18
-
-
0037464220
-
0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
-
0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K,” Appl. Phys. Lett., vol. 82, pp. 1986–1988, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 1986-1988
-
-
Jiang, L.1
Li, S.S.2
Yeh, N.T.3
Chyi, J.I.4
Ross, C.E.5
Jones, K.S.6
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