Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires

Journal of Materials Chemistry

Volumn 13, Issue 8, 2003, Pages 2024-2027

  Wu, Qiang ^a   Hu, Zheng ^a   Wang, Xizhang ^a   Lu, Yinong ^b   Huo, Kaifu ^a   Deng, Shaozhi ^c   Xu, Ningsheng ^c   Shen, Bo ^a   Zhang, Rong ^a   Chen, Yi ^a  

^a NANJING UNIVERSITY   (China)

^b NANJING TECH UNIVERSITY   (China)

^c SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ENERGY DISPERSIVE SPECTROSCOPY; RAMAN SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

FIELD EMISSION PROPERTIES;

NANOSTRUCTURED MATERIALS;

ALUMINUM DERIVATIVE; ALUMINUM NITRIDE; UNCLASSIFIED DRUG;

ARTICLE; FIELD EMISSION; LIQUID; RAMAN SPECTROMETRY; SOLID; TRANSMISSION ELECTRON MICROSCOPY; VAPOR; X RAY ANALYSIS; X RAY DIFFRACTION;

EID: 0042066693     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/b303987k     Document Type: Article

References (24)

1. J. H. Edgar, S. Strite, I. Akasaki, H. Amano and C. Wetzel, in Properties. Processing and Applications of Gallium Nitride and Related Semiconductors, INSPEC, London, 1999, Part A.
2. W. Q. Han, S. S. Fan, Q. Q. Li and Y. D. Hu, Science, 1997, 277, 1287.
3. J. R. Kim, H. M. So, J. W. Park, J. J. Kim, J. Kim, C. J. Lee and S. C. Lyu, Appl. Phys. Lett., 2002, 80, 3548.
4. Y. Huang, X. F. Duan, Y. Cui and C. M. Lieber, Nano Lett., 2002, 2, 101.
5. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith and C. M. Lieber, Nature, 2002, 415, 617.
6. C. I. Wu, A. Kahn, E. S. Hellman and D. N. Buchanan, Appl. Phys. Lett., 1998, 73, 1346.
7. J. M. Bonard, H. Kind, A. T. Stockli and L. O. Nilsson, Solid-State Electron., 2001, 45, 893.
8. (a) J. A. Haber, P. C. Gibbons and W. E. Buhro, J. Am. Chem. Soc., 1997, 119, 5455;
9. (b) J. A. Haber, P. C. Gibbons and W. E. Buhro, Chem. Mater., 1998, 10, 4062.
10. Y. J. Zhang, J. Liu, R. R. He, Q. Zhang, X. Z. Zhang and J. Zhu, Chem. Mater., 2001, 13, 3899.
11. V. N. Tondare, C. Balasubramanian, S. V. Shende, D. S. Joag, V. P. Godbole, S. V. Bhoraskar and M. Bhadbhade, Appl. Phys. Lett., 2002, 80, 4813.
12. (a) Y. Chen, S. Z. Deng, N. S. Xu, J. Chen, X. C. Ma and E. G. Wang, Mater. Sci. Eng., A, 2002, 327, 16;
13. (b) J. Chen, S. Z. Deng, N. S. Xu, S. H. Wang, X. G. Wen, S. H. Yang, C. L. Yang, J. N. Wang and W. K. Ge, Appl. Phys. Lett., 2002, 80, 3620.
14. S. Fukumoto, T. Hookabe and H. Tsubakino, J. Mater. Sci., 2000, 35, 2743.
15. T. J. Trentler, K. M. Hickman, S. C. Goel, A. M. Viano, P. C. Gibbons and W. E. Buhro, Science, 1995, 270, 1791.
16. C. H. Liang, W. Z. Li, Z. B. Wei, Q. Xin and C. Li, Ind. Eng. Chem. Res., 2000, 39, 3694.
17. -1.
18. M. Kuball, J. M. Hayes, A. D. Prins, N. W. A. van Uden, D. J. Dunstan, Y. Shi and J. H. Edgar, Appl. Phys. Lett., 2001, 78, 724.
19. (a) G. A. Amaratunga and S. R. P. Silva, Appl. Phys. Lett., 1996, 68, 2529;
20. (b) Q. H. Wang, T. D. Corrigan, J. Y. Dai, R. P. H. Chang and A. R. Krauss, Appl. Phys. Lett., 1997, 70, 3308.
21. S. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell and H. J. Dai, Science, 1999, 283, 512.
22. W. B. Choi, D. S. Chung, J. H. Kang, H. Y. Kim, Y. W. Jin, I. T. Han, Y. H. Lee, J. E. Jung, N. S. Lee, G. S. Park and J. M. Kim, Appl. Phys. Lett., 1999, 75, 3129.
23. C. C. Chen, C. C. Yeh, C. H. Chen, M. Y. Yu, H. L. Liu, J. J. Wu, K. H. Chen, L. C. Chen, J. Y. Peng and Y. F. Chen, J. Am. Chem. Soc., 2001, 123, 2791.
24. J. W. Gadzuk and E. W. Plummer, Rev. Mod. Phys., 1973, 45, 487.