Discrete steps in the capacitance-voltage characteristics of GaInN/GaN light emitting diode structures

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 233-238

  Xia, Y ^a,b   Williams, E ^a,b   Park, Y ^b   Yilmaz, I ^a,b   Shah, J M ^a,b   Schubert, E F ^b   Wetzel, C ^a,b  

^a Research Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BIAS VOLTAGE; CARRIER DYNAMICS; HOLE WAVEFUNCTIONS; RESISTIVE IMPEDANCES;

LIGHT EMITTING DIODES;

EID: 23844515726     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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