Current and temperature dependent characteristics of deep-ultraviolet light-emitting diodes

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3414-3417

  Cao, X A ^a   LeBoeuf, S F ^b  

^a West Virginia University   (United States)

^b Valencell Inc   (United States)

Author keywords

Carrier tunneling; Electroluminescence (EL); Light emitting diodes; Light emitting diode (LED); Localization effects; Tunneling

Indexed keywords

CURRENT DENSITY; ELECTRIC PROPERTIES; ELECTRON TUNNELING; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

DEEP-ULTRAVIOLET MULTIPLE-QUANTUM-WELL; LOCALIZATION EFFECTS;

LIGHT EMITTING DIODES;

EID: 36848999259     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908532     Document Type: Article

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