Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique

Journal of Crystal Growth

Volumn 241, Issue 3, 2002, Pages 283-288

  Plaza, J L ^a   Hidalgo, P ^b   Mendez B ^b   Piqueras, J ^b   Dieguez E ^a  

^a UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

A2. Gradient freeze technique; B2. Semiconducting III V materaials

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; INCLUSIONS; NEODYMIUM; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

GRADIENT FREEZE TECHNIQUES;

CRYSTAL GROWTH;

EID: 0036605991     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01249-6     Document Type: Article

References (24)

1. Rare earth doped semiconductors
2. Rare earth doped semiconductors II