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Materials Science and Engineering: B

Volumn 81, Issue 1-3, 2001, Pages 157-160

Electrical and compositional properties on Bridgman-grown Gd-doped GaSb substrates

(6) Plaza, J L a Hidalgo, P b Mendez B b Piqueras, J b Casta, J L a Dieguez E a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

b UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

Band gap; Gallium antimonide; Rare earths

Indexed keywords

CARRIER CONCENTRATION; COMPOSITION EFFECTS; DOPING (ADDITIVES); ENERGY GAP; GADOLINIUM; GALLIUM COMPOUNDS; PRECIPITATION (CHEMICAL);

BAND-GAP EMISSIONS; BRIDGMAN METHOD;

INGOTS;

EID: 0035942375 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(00)00711-X Document Type: Article

Times cited : (3)

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