SCOPUS 정보 검색 플랫폼

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 71, Issue 1-3, 2000, Pages 282-287

Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

(5) Plaza, J L a Hidalgo, P b Mendez B b Piqueras, J b Dieguez E a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

b UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ERBIUM; ETCHING; HEAT TREATMENT; NEODYMIUM; POLISHING; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM ANTIMONIDE; VERTICAL BRIDGMAN METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033904555 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(99)00391-8 Document Type: Article

Times cited : (10)

References (13)

1
- 33847536554
- Materials Research Society, Pittsburg
- S. Coffa, A. Polman, R.N. Schwartz, Rare Earth Doped Semiconductors II, MRS Symposium Proceedings 422, Materials Research Society, Pittsburg, 1996.
- (1996) Rare Earth Doped Semiconductors II, MRS Symposium Proceedings , vol.422
- Coffa, S.¹ Polman, A.² Schwartz, R.N.³

2
- 0031352277
- A.R. Zanatta, L.A.O. Nunes, Appl. Phys. Lett. 71 (25) (1997) 3679.
- (1997) Appl. Phys. Lett. , vol.71 , Issue.25 , pp. 3679
- Zanatta, A.R.¹ Nunes, L.A.O.²

3
- 0001723073
- L.F. Zakharenkov, V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, M.A. Sokolova, Sov. Phys. Semicond. 15 (1981) 946.
- (1981) Sov. Phys. Semicond. , vol.15 , pp. 946
- Zakharenkov, L.F.¹ Kasatkin, V.A.² Kesamanly, F.P.³ Samorukov, B.E.⁴ Sokolova, M.A.⁵

4
- 0001150362
- V.A. Kasatkin, F.P. Kesamanly, V.G. Makarenkov, V.F. Masterov, B.E. Samorukov, Sov. Phys. Semicond. 14 (1980) 1092.
- (1980) Sov. Phys. Semicond. , vol.14 , pp. 1092
- Kasatkin, V.A.¹ Kesamanly, F.P.² Makarenkov, V.G.³ Masterov, V.F.⁴ Samorukov, B.E.⁵

5
- 0001027415
- V.A. Kasatkin, F.P. Kesamanly, B.E. Samorukov, Sov. Phys. Semicond. 15 (1981) 352.
- (1981) Sov. Phys. Semicond. , vol.15 , pp. 352
- Kasatkin, V.A.¹ Kesamanly, F.P.² Samorukov, B.E.³

6
- 0001390690
- H. Ennen, J. Schneider, J. Electron. Mater. 14A (1985) 115.
- (1985) J. Electron. Mater. , vol.14 A , pp. 115
- Ennen, H.¹ Schneider, J.²

7
- 0032305111
- P. Hidalgo, B. Méndez, J. Piqueras, J. Plaza, E. Diéguez, Semicond. Sci. Technol. 13 (1998) 1431.
- (1998) Semicond. Sci. Technol. , vol.13 , pp. 1431
- Hidalgo, P.¹ Méndez, B.² Piqueras, J.³ Plaza, J.⁴ Diéguez, E.⁵

8
- 0009429262
- T.J. Zhang, S.Y. Li, Solid State Electron. 29 (1986) 775.
- (1986) Solid State Electron. , vol.29 , pp. 775
- Zhang, T.J.¹ Li, S.Y.²

9
- 33645843086
- P.S. Dutta, K.S. Koteswara Rao, H.L. Bhat, K. Gopalakrihna Naik, V. Kumar, J. Cryst. Growth 155 (1995) 3702.
- (1995) J. Cryst. Growth , vol.155 , pp. 3702
- Dutta, P.S.¹ Koteswara Rao, K.S.² Bhat, H.L.³ Gopalakrihna Naik, K.⁴ Kumar, V.⁵

10
- 33645846660
- M.E. Mullen, B. Lüthi, P.S. Wang, E. Bucher, L.D. Longinotti, J.P. Maita, Phys. Rev. B 10 (1974) 1.
- (1974) Phys. Rev. B , vol.10 , pp. 1
- Mullen, M.E.¹ Lüthi, B.² Wang, P.S.³ Bucher, E.⁴ Longinotti, L.D.⁵ Maita, J.P.⁶

11
- 0001869540
- M. Ichimura, K. Higuchi, Y. Hattori, T. Wada, N. Kitamura, J. Appl. Phys. 68 (1990) 6153.
- (1990) J. Appl. Phys. , vol.68 , pp. 6153
- Ichimura, M.¹ Higuchi, K.² Hattori, Y.³ Wada, T.⁴ Kitamura, N.⁵

12
- 0033514722
- J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, J.L. Castaño, E. Diéguez, J. Cryst. Growth 198 (1999) 379.
- (1999) J. Cryst. Growth , vol.198 , pp. 379
- Plaza, J.L.¹ Hidalgo, P.² Méndez, B.³ Piqueras, J.⁴ Castaño, J.L.⁵ Diéguez, E.⁶

13
- 0029387876
- B. Méndez, J. Piqueras, P.S. Dutta, E. Diéguez, Appl. Phys. Lett. 67 (1995) 2648.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2648
- Méndez, B.¹ Piqueras, J.² Dutta, P.S.³ Diéguez, E.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.