Effect of erbium doping on the defect structure of GaSb crystals

Semiconductor Science and Technology

Volumn 13, Issue 12, 1998, Pages 1431-1433

  Hidalgo, P ^a   Mendez B ^a   Piqueras, J ^a   Plaza, J ^b   Dieguez E ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ERBIUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

NATIVE ACCEPTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032305111     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/12/017     Document Type: Article

References (12)

1. Zhao X, Hirakawa K and Ikoma T 1989 Appl. Phys. Lett. 54 712
2. Isshiki H, Kobayashi H, Yugo S and Kimura T 1991 Appl. Phys. Lett. 58 484
3. Neuhalfen A J and Wessels B W 1991 Appl. Phys. Lett. 59 2317
4. Thaik M, Hömmerich U, Schwartz R N, Wilson R G and Zavada J M 1997 Appl. Phys. Lett. 71 2641
5. Kim S, Rhee S J, Turnbull D A, Li X, Coleman J J, Bishop S G and Klein P B 1997 Appl. Phys. Lett. 71 2662
6. Sun Y and Wu M 1995 J. Appl. Phys. 78 6691
7. Sun Y, Wu M and Ting Y 1996 J. Cryst. Growth 85 449
8. Panin G N, Dutta P S, Piqueras J and Diéguez E 1995 Appl. Phys. Lett. 67 3584
9. Méndez B, Dutta P S, Piqueras J and Diéguez E 1995 Appl. Phys. Lett. 67 2648
10. Hidalgo P, Méndez B, Dutta P S, Piqueras J and Diéguez E 1998 Phys. Rev. B 57 6479
11. Méndez B and Piqueras J 1991 J. Appl. Phys. 69 2776
12. Méndez B, Piqueras J, Dutta P S and Diéguez E 1996 Mater. Sci. Eng. B 42 38