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Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 381-384

Intrinsic defects in HPSI 6H-SiC: An EPR study

(5) Carlsson, P a Son, N T a Magnusson, B a,b Henry, A a Janzen E a

a LINKÖPING UNIVERSITY (Sweden)

b Norstel AB (Sweden)

Author keywords

6H SiC; Carrier compensation; EPR; Intrinsic defects; Semi insulating

Indexed keywords

ACTIVATION ENERGY; CARBON; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETIC RESONANCE; TEMPERATURE DISTRIBUTION;

6H-SIC; ANNEALING BEHAVIOR; CARRIER COMPENSATION; ELECTRON PARAMAGNETIC RESONANCES (EPR); INTRINSIC DEFECTS; SEMI-INSULATING; TEMPERATURE DEPENDENCE; THERMAL ACTIVATION ENERGIES;

SILICON CARBIDE;

EID: 63849311058 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: None Document Type: Conference Paper

Times cited : (7)

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