Deep acceptor levels of the carbon vacancy-carbon antisite pairs in 4H-SiC

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 449-452

  Carlsson, P ^a   Son, N T ^a   Umeda, T ^b   Isoya, J ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Antisite; Deep level; Electron Paramagnetic Resonance; Semi insulating; Vacancy

Indexed keywords

CARBON; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETISM; SILICON CARBIDE; VACANCIES;

ANTISITE; DEEP LEVEL; ELECTRON PARAMAGNETIC RESONANCES (EPR); HIGH-PURITY SEMI-INSULATING; N-TYPE MATERIALS; NEGATIVELY CHARGED; SEMI-INSULATING; SUPERCELL CALCULATIONS;

PARAMAGNETIC RESONANCE;

EID: 38549152754     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.449     Document Type: Conference Paper

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