Calculation of band structure in (101)-biaxially strained Si

Science in China, Series G: Physics, Mechanics and Astronomy

Volumn 52, Issue 4, 2009, Pages 546-550

  Song, Jianjun ^a   Zhang, Heming ^a   Hu, Huiyong ^a   Fu, Qiang ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

Band structure; Effective mass; Strained Si

Indexed keywords

BAND GAPS; EFFECTIVE MASS; ELECTRON MASS; GE FRACTIONS; HOOKE'S LAWS; SPLITTING ENERGIES; STRAINED SI; STRUCTURE MODELS;

BAND STRUCTURE; ELECTRIC CIRCUIT BREAKERS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GERMANIUM; LANDFORMS; SILICON;

SILICON ALLOYS;

EID: 63849280878     PISSN: 16721799     EISSN: 18622844     Source Type: Journal    
DOI: 10.1007/s11433-009-0078-1     Document Type: Article

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