Simulation study for HTCVD of SiC using first-principles calculation and thermo-fluid analysis

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 47-50

  Kitou, Yasuo ^a   Makino, Emi ^a   Inaba, Kenji ^b   Hosokawa, Norikazu ^a   Hiramatsu, Hidehiko ^a   Hasegawa, Jun ^a   Onda, Shoichi ^a   Tsuboi, Hideyuki ^b   Takaba, Hiromitsu ^b   Miyamoto, Akira ^b  

^a DENSO CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Activation energy; Bulk growth; Chlorinated species; First principles calculation; Free energy; Frequency factor; Gas phase reaction; Growth rate; HTCVD; Thermo fluid analysis

Indexed keywords

ACTIVATION ENERGY; CALCULATIONS; CHLORINE COMPOUNDS; FREE ENERGY; PHASE INTERFACES; SILICON CARBIDE;

BULK GROWTH; CHEMICAL VAPOUR DEPOSITION; CHLORINATED SPECIES; FIRST PRINCIPLE CALCULATIONS; FLUID ANALYSIS; FREQUENCY FACTORS; GAS-PHASE REACTIONS; HIGH TEMPERATURE CHEMICAL VAPOR DEPOSITION; HIGHEST TEMPERATURE; THERMO FLUIDS; THERMO-FLUID ANALYSE;

CHEMICAL VAPOR DEPOSITION;

EID: 63849109638     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.47     Document Type: Conference Paper

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