Ultrathin amorphization of single-crystal silicon by ultraviolet femtosecond laser pulse irradiation

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Izawa, Yusaku ^a   Tokita, Shigeki ^b   Fujita, Masayuki ^a,c   Nakai, Mitsuo ^a   Norimatsu, Takayoshi ^a   Izawa, Yasukazu ^a  

^a OSAKA UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c INSTITUTE FOR LASER TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SI; CRYSTALLINE SI (C-SI); FEMTOSECOND LASER IRRADIATIONS; FEMTOSECOND LASER PULSE IRRADIATIONS; LASER SCANNING MICROSCOPIES; LATTICE DEFECTS; MELTING DEPTHS; MELTING TIME; PUMP-PROBE MEASUREMENTS; RE SOLIDIFICATIONS; SINGLE-CRYSTAL SILICONS; THIRD HARMONICS; THRESHOLD FLUENCE; TI: SAPPHIRE LASERS; ULTRA-HIGH SPEED;

AMORPHIZATION; AMORPHOUS SILICON; CORUNDUM; IRRADIATION; LASER BEAMS; MELTING; PHOTOLITHOGRAPHY; PROBES; PUMPING (LASER); PUMPS; SILICON; STRUCTURAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; ULTRASHORT PULSES;

PULSED LASER APPLICATIONS;

EID: 63749117262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3087754     Document Type: Article

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