Piezoelectric thin films and their applications for electronics

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Yoshino, Yukio ^a  

^a MURATA MANUFACTURING CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN THIN FILMS; BAW RESONATORS; BULK ACOUSTIC WAVE RESONATORS; CONTOUR MODES; CRYSTALLINITY; ELECTRO-MECHANICAL COUPLING COEFFICIENTS; INTERNAL STRESS; MEMBRANE THICKNESS; PIEZOELECTRIC THIN FILMS; QUALITY FACTOR; RADIO-FREQUENCY SPUTTERING; RESONANT FREQUENCIES; TEMPERATURE COEFFICIENT OF FREQUENCIES; THICKNESS MODES; THICKNESS UNIFORMITIES; ULTRA-THIN MEMBRANES; ZNO; ZNO THIN FILMS;

ACOUSTICS; APPLICATIONS; METALLIC FILMS; MOBILE TELECOMMUNICATION SYSTEMS; NATURAL FREQUENCIES; OPTICAL FILMS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; RESONATORS; SEMICONDUCTING ZINC COMPOUNDS; ULTRATHIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

ELECTROMECHANICAL DEVICES;

EID: 63749087719     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072691     Document Type: Article

References (22)

1. R. Ruby, P. Bradley, J. D. Larson III, and Y. Oshmyansky, Electron. Lett. 0013-5194 10.1049/el:19990559 35, 794 (1999).
2. T. R. Sliker and D. A. Roberts, J. Appl. Phys. 0021-8979 10.1063/1.1709882 38, 2350 (1967).
3. K. M. Lakin and J. S. Wang, Appl. Phys. Lett. 0003-6951 10.1063/1.92298 38, 125 (1981).
4. Y. Miyasaka, S. Hoshino, and S. Takahashi, Jpn. J. Appl. Phys., Suppl. 23, 119 (1983).
5. K. Nakamura, Y. Ohashi, and H. Shimizu, Jpn. J. Appl. Phys., Part 1 25, 371 (1986). 0021-4922
6. J. Shiokawa, Y. Makishima, K. Hashimoto, and M. Yamaguchi, Jpn. J. Appl. Phys., Part 1 32, 2321 (1993). 0021-4922
7. Y. Yoshino, S. Iwasa, H. Aoki, Y. Deguchi, Y. Yamamoto, and K. Ohwada, Mater. Res. Soc. Symp. Proc. 441, 241 (1997).
8. A. Kawabata, Jpn. J. Appl. Phys., Part 1 23, 17 (1984). 0021-4922
9. Y. Yoshino, M. Kadota, H. Ieki, T. Kasanami, and K. Wakino, The Eighth International Symposium on Plasma Chemistry, 1987 (unpublished), p. 2271.
10. M. Takeuchi, K. Inoue, Y. Yoshino, and K. Ohwada, Mater. Res. Soc. Symp. Proc. 518, 215 (1998).
11. I. Cerven, T. Lacko, I. Novotny, V. Tvarozek, and M. Harvanka, J. Cryst. Growth 0022-0248 10.1016/0022-0248(93)90206-C 131, 546 (1993).
12. K. Umeda, M. Takeuchi, H. Yamada, Y. Yoshino, and R. Kubo, The Eighth International Symposium on Plasma Chemistry, 2005 (unpublished), p. 443.
13. M. -A. Dubois and P. Muralt, J. Appl. Phys. 0021-8979 10.1063/1.1359162 89, 6389 (2001).
14. K. Nakamura, H. Sasaki, and H. Shimizu, Electron. Lett. 0013-5194 10.1049/el:19810355 17, 507 (1981).
15. M. -A. Dubois and P. Muralt, Appl. Phys. Lett. 0003-6951 10.1063/1.124055 74, 3032 (1999).
16. S. Fujishima, T. Kasanami, and T. Nakamura, Jpn. J. Appl. Phys., Suppl. 22, 150 (1983).
17. D. Larson, P. Bradley, S. Wartenberg, and R. C. Ruby, Proc.-IEEE Ultrason. Symp. 1, 863 (2000).
18. J. Bjurstrom, G. Wingqvist, and I. Katardjiev, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/TUFFC.2006.149 53, 2095 (2006).
19. M. Link, M. Schreiter, J. Weber, R. Gabl, D. Pitzer, R. Primig, W. Wersing, M. B. Assouar, and O. Elmazria, J. Vac. Sci. Technol. A 0734-2101 10.1116/1.2165658 24, 218 (2006).
20. K. Tominaga, N. Ueshiba, Y. Shintani, and O. Tada, Jpn. J. Appl. Phys. 0021-4922 10.1143/JJAP.20.519 20, 519 (1981).
21. K. Tominaga, S. Iwamura, Y. Shintani, and O. Tada, Jpn. J. Appl. Phys., Part 1 22, 418 (1983). 0021-4922
22. Y. Yoshino, N. Tsukai, K. Inoue, M. Takeuchi, T. Nomura, T. Makio, S. Arai, and T. Hata, Mater. Res. Soc. Symp. Proc. 605, 267 (2000).