Electrochemically-gated field-effect transistor with indium tin oxide nanoparticles as active layer

Acta Physica Polonica A

Volumn 115, Issue 2, 2009, Pages 473-476

  Dasgupta, ^a,b   Dehm, S ^a   Kruk, R ^a   Hahn, H ^a,b  

^a KARLSRUHE INSTITUTE OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; INDIUM; METALLIC COMPOUNDS; NANOPARTICLES; REDOX REACTIONS; SEMICONDUCTING INDIUM; TIN; TIN OXIDES; TRANSISTORS;

APPLIED POTENTIALS; DOUBLE LAYER REGION; ELECTROCHEMICAL GATING; FIELD-EFFECT DEVICES; HIGH SURFACE-TO-VOLUME RATIO; INDIUM TIN OXIDE; INDIUM-TIN OXIDE NANOPARTICLES; JUNCTION FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 63549087542     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.115.473     Document Type: Conference Paper

References (16)

1. J.D. Yuen, A.S. Dhoot, E.B. Namdas, N.E. Coates, M. Heeney, I. McCulloch, D. Moses, A.J. Heeger, J. Am. Chem. Soc. 129, 14367 (2007).
2. M.J. Panzer, C.D. Frisbie, Adv. Funct. Mater. 16, 1051 (2006).
3. M.J. Panzer, C.D. Frisbie, J. Am. Chem. Soc. 129, 6599 (2007).
4. G.P. Siddons, D. Merchin, J.H. Back, J.K. Jeong, M. Shim, Nano Lett. 4, 927 (2004).
5. T. Ožel, A. Gaur, J.A. Rogers, M. Shim, Nano Lett. 5, 905 (2005).
6. S. Dasgupta, R. Kruk, D. Ebke, A. Hütten, C Bansal, H. Hahn, J. Appl. Phys. 104, 103707 (2008).
7. A.K. Mishra, C. Bansal, H. Hahn, J. Appl. Phys. 103, 094308 (2008).
8. S.V. Rotkin, K. Hess, Appl. Phys. Lett. 84, 3139 (2004).
9. S. Dasgupta, S. Gottschalk, R. Kruk, H. Hahn, Nanotechnology 19, 435203 (2008).
10. J. Ederth, P. Johnsson, G.A. Niklasson, A. Hoel, A. Hultåker, P. Heszler, C.G. Granqvist, A.R. van Doom, M.J. Jongerius, D. Burgard, Phys. Rev. B 68, 155410 (2003).
11. J. Ederth, G.A. Niklasson, A. Hultåker, P. Heszler, C.G. Granqvist, A.R. van Doom, M.J. Jongerius, D. Burgard, J. Appl. Phys. 93, 984 (2003).
12. J. Ederth, A. Hultåker, C.A. Niklasson, P. Heszler, A.R. van Doorn, M.J. Jongerius, D. Burgard, C.G. Granqvist, Appl. Phys. A 81, 1363 (2005).
13. K. Okamura, N. Mechau, D. Nikolova, H. Hahn, J. Appl. Phys. 93, 083105 (2008).
14. H.E. Katz, Chem. Mater. 16, 4748 (2004).
15. D.V. Talapin, C.B. Murray, Science 310, 86 (2005).
16. T. Cui, Y. Liu, M. Zhu, Appl. Phys. Lett. 87, 183105 (2005).