Possibility of a metallic field-effect transistor

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3139-3141

  Rotkin, Slava V ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BARRIERS; GROUP THEORY; METALLIC FIELD-EFFECT TRANSISTORS (MEFET); MODULATION GATES; SINGLE-WALL CARBON NANOTUBES (SWNT);

CARBON NANOTUBES; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ENERGY GAP; FERMI LEVEL; FOURIER TRANSFORMS;

FIELD EFFECT TRANSISTORS;

EID: 2442551512     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1710717     Document Type: Article

References (20)

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17. 2/2W, which is large for a narrow gate. However, in this work we did not consider a Coulomb blockade because an effective gap is exponentially renormalized at a high conductance of the tunnel junction (Ref. 17). Large coupling between sides of the MSJ and quantum fluctuations of the charge wash out the correlation and destroy the Coulomb blockade.
18. K. A. Matveev, Phys. Rev. B 51, 1743 (1995).
19. 2/(9bRγ) is about 0.06 of the free election mass for the SWNT of the radius R≃0.7 nm.
20. 2/h, 4 times of the conductance quantum (for two spin and two space channels). This gives a minimum resistance of the SWNT device ∼6.5 kΩ. The lower resistance can be expected in the case of entirely nanotube circuit (Ref. 2). The quantum contact resistance will not limit anymore the ON current in this case. That device can fully exploit all advantages of the METFET.