Direct source-to-drain tunnelling and its impact on the intrinsic parameter fluctuations in nanometre scale double gate MOSFETs

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 2, Issue , 2003, Pages 202-205

  Watling, J R ^a   Asenov, A ^a   Brown, A R ^a   Svizhenko, A ^b   Anantram, M P ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

Density Gradient; Double Gate MOSFETs; Drift Diffusion; Quantum Transport

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; EQUATIONS OF STATE; GREEN'S FUNCTION; QUANTUM THEORY; SURFACE ROUGHNESS;

DENSITY GRADIENT; DOUBLE GATE MOSFET; DRIFT DIFFUSION; QUANTUM TRANSPORT;

MOSFET DEVICES;

EID: 6344289025     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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