Microcrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method

Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1675-1678

  Bilyalov, R ^a   Poortmans, J ^a   Sharafutdinov, R ^b   Khmel, S ^b   Shchukin, V ^b   Semenova, O ^c   Fedina, L ^c   Kolesov, B ^c  

^a IMEC   (Belgium)

^b KUTATELADZE INSTITUTE OF THERMOPHYSICS   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ZONE; MICROCRYSTALLINE SILICON; OPTICAL CHARACTERISTICS; PHOTOELECTRICAL CHARACTERISTICS;

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; ELECTRON BEAMS; SILICON; SOLAR CELLS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 6344280497     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)

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