High-rate deposition of a-Si:H films using a flow plasma-chemical method with electron beam activation

Journal of Applied Physics

Volumn 79, Issue 9, 1996, Pages 7274-7277

  Sharafutdinov, R G ^a   Skrynnikov, A V ^a   Parakhnevich, A V ^a   Ayupov, B M ^b   Badalian, A M ^b   Polyakov, O V ^b   Baklanov, M R ^c   Mogilnikov, K P ^c   Biryukov, S A ^c  

^a KUTATELADZE INSTITUTE OF THERMOPHYSICS   (Russian Federation)

^b NIKOLAEV INSTITUTE OF INORGANIC CHEMISTRY   (Russian Federation)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000366256     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361444     Document Type: Article

References (12)

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