Impact of quantum mechanical tunneling on off-leakage current in double-gate MOSFET using a quantum drift-diffusion model

2004 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2004

Volumn 2, Issue , 2004, Pages 17-20

  Jaud, M A ^a   Barraud, S ^a   Le Carval, G ^a  

^a CEA LETI   (France)

Author keywords

Density gradient; Double gate MOSFET; Off leakage current; Schr dinger; Simulation; Source to drain tunneling

Indexed keywords

CALIBRATION; COMPUTER ARCHITECTURE; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION; QUANTUM THEORY; THERMAL EFFECTS;

DENSITY GRADIENTS; DOUBLE-GATEE MOSFET; OFF-LEAKAGE CURRENT; SORUCE-TO-DRAIN TUNNELING;

LEAKAGE CURRENTS;

EID: 6344263953     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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