2D Analysis of source-to-drain tunneling in decananometer MOSFETs with the density-gradient model

2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Volumn , Issue , 2002, Pages 552-555

  Schenk, Andreas ^a   Wettstein, Andreas ^b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

Author keywords

Decananometer mosfets; Deep sub micron devices; Density gradient method; Source to drain tunneling; TCAD

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; DEGRADATION; KINETIC ENERGY; QUANTUM THEORY; SILICA; THERMIONIC EMISSION;

DECANANOMETER MOSFETS; DEEP SUB-MICRON DEVICES; DENSITY GRADIENT METHODS; SOURCE-TO-DRAIN TUNNELING; TCAD;

MOSFET DEVICES;

EID: 6344223622     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. H. Kawaura, T. Sakamoto, and T. Baba, Appl. Phys. Lett. 76 (25), 3810 (2000).
2. Y. Naveh and K. K. Likharev, IEEE Electron Device Lett. 21 (5), 242 (2000).
3. L. Chang and C. Hu, Superlattices and Microstructures 28 (5/6), 351 (2000).
4. A. Wettstein, A. Schenk, and W. Fichtner, IEEE Trans. Electron Devices 48 (2), 279 (2000).
5. C. L. Gardner, SIAM J. Appl. Math. 54 (2), 409 (1994).
6. M. G. Ancona, Z. Yu, R. W. Dutton, P. J. V. Voorde, M. Cao, and D. Vook, IEEE IEEE Trans. Electron Devices 47 (12), 2310 (2000).