Geometrical Dependence of High-Bias Current in Multiwalled Carbon Nanotubes

Physical Review Letters

Volumn 92, Issue 2, 2004, Pages 268041-268044

  Bourlon, B ^a   Glattli, D C ^a,b   Placais B ^a   Berroir, J M ^a   Miko, C ^c   Forro L ^c   Bachtold, A ^a  

^a ECOLE NORMALE SUPÉRIEURE   (France)

^b SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; ELECTRON TUNNELING; LOGIC CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; STATISTICAL METHODS; SYNTHESIS (CHEMICAL);

CONCENTRIC SHELLS; MULTIWALLED CARBON NANOTUBES (MWNT);

CARBON NANOTUBES;

EID: 6344225229     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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