Two step annealing of iridium thin films prepared by plasma-enhanced atomic layer deposition

ECS Transactions

Volumn 16, Issue 4, 2009, Pages 309-314

  Kim, Sung Wook ^a   Kwon, Se Hun ^a   Kang, Sang Won ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATOMIC LAYER DEPOSITION; ATOMS; DYNAMIC RANDOM ACCESS STORAGE; IRIDIUM; OXYGEN;

1 ,5-CYCLOOCTADIENE; ATOMIC REARRANGEMENTS; CAPACITOR ELECTRODE; DYNAMIC RANDOM ACCESS MEMORY; MORPHOLOGICAL STABILITY; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; PREFERRED ORIENTATIONS; TWO-STEP ANNEALING;

THIN FILMS;

EID: 63149198332     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2980005     Document Type: Conference Paper

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