Development trends in the field of wafer bonding technologies

ECS Transactions

Volumn 16, Issue 8, 2009, Pages 81-92

  Wiemer, Maik ^a   Haubold, Marco ^b   Jia, Chenping ^b   Wünsch, Dirk ^b   Fromel J ^a   Geßner, Thomas ^a,b  

^a FRAUNHOFER INSTITUTE FOR ELECTRONIC NANO SYSTEMS ENAS   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MICROELECTRONICS; SILICON WAFERS;

BONDING TECHNIQUES; DEVELOPMENT TRENDS; METAL-TO-METAL BONDING; MICRO-SYSTEM TECHNOLOGIES; PLASMA PRE-TREATMENT; SOI SUBSTRATES; WAFERBONDING TECHNOLOGY;

WAFER BONDING;

EID: 63149123058     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982857     Document Type: Conference Paper

References (9)

1. Ransselear Polytechnic Institute (RPI), Wafer-level 3D Hyper-Integration Technology Platform, 2005
2. C. Rusu, K. Persson, B. Ottoson, D. Billger, LTCC interconnects in microsystems, Journal of Micromechanics and Microengineering 16, (2006)
3. F. Niklaus, G. Stemme, J.-Q. Lu and R. J. Gutmann, Adhesive wafer bonding, Journal of Applied Physics 99, 031101 (2006).
4. Y.-K. Kim et al., Low temperature epoxy bonding for wafer level MEMS packaging, p. 323-328 Sensors and Actuators A 143 (2008)
5. T. Fukushima, Y. Yamada, H. Kikuchi and M. Koyanagi, New Three-Dimensional Integration Technology Using Chip-To-Wafer Bonding to Achieve Ultimate Super-Chip Integration, Japanese Journal of Applied Physics 45 4B, (2006).
6. T. Geßner, T. Otto, M. Wiemer, J Frömel, Wafer bonding in micro mechanics and microelectronics - an overview
7. Wang et al., Application of Au-Sn Eutectic Bonding in Hermetic Radio-Frequency Microelectromechanical System Wafer Level Packaging, Journal of Electronic Materials, Vol. 35 No. 3, 2006
8. C. Wang, E. Higurashi, T. Suga, Void-Free Room-Temperature Silicon Wafer Direct Bonding using Sequential Plasma Activation, Japanese Journal of Applied Physics, Vol. 47, No. 4, 2008
9. 2 Ti/Ti Journal of the Electrochemical Society, 154 (1), H20-H25 (2007)