The strain distributions and carrier's confining potentials of self-organized InAs/GaAs quantum dot

International Journal of Modern Physics B

Volumn 20, Issue 29, 2006, Pages 4899-4907

  Liu, Yumin ^a,b   Yu, Zhongyuan ^a,b   Huang, Yongzhen ^c  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Quantum dot; Self organized; Strain

Indexed keywords

EID: 33751075196     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0217979206035758     Document Type: Article

References (13)

1. R. Notzel, Self-organized growth of quantum-dot structures, Semicond. Sci. Technol. 11, 1365 (1996).
2. M. Roy and P. A. Maksym, Efficient methods for calculating electronic states in self-assembled quantum dots, Phys. Rev. B 68, 23539 (2003).
3. M. Grundmann, O. Stier and D. Bimberg, InAs/GaAs pyramidal quantum dots: strain distribution, optical phonons, and electronic structure, Phys. Rev. B 52, 11969 (1995).
4. N. Metropolis, A. W. Rosenbluth, M. N. Rosenbluth, A. H. Teller and E. Teller, Equations of state calculations by fast computing machine, J. Chem. Phys. 21, 1087 (1953).
5. V.-G. Stoleru, D. Pal and E. Towe, Self-assembled (In, Ga) As/GaAs quantum-dot nanostructures: strain distribution and electronic structure, Physica E 15, 131 (2002).
6. S. Noda, T. Abe and M. Tamura, Mode assignment of excited states in self-assembled InAs/GaAs quantum dots, Phys. Rev. B 58, 7181 (1998).
7. T. Satio, J. N. Schulman and Y. Arakawa, Strain-energy distribution and electronic structure of InAs Pyramidal quantum dots with uncovered surface: Tight-binding analysis, Phys. Rev. B 57, 13016 (1998).
8. Y. M. Liu, Z. Y. Yu, H. B. Yang and Y. Z. Huang, Elastic strain field distribution of a self-organized growth lensed-shaped quantum dot by finite element method, Chinese J. Semiconductors 26, 1318 (2005).
9. Y. M. Liu, Z. Y. Yu, H. B. Yang and Y. Z. Huang, Investigation about the influences of different shaped quantum dots on the Elastic strain fields distributions, Chinese J. Semiconductors 26, 2355 (2005).
10. Y. M. Liu, Z. Y. Yu, H. B. Yang and Y. Z. Huang, Investigation of the ekastic strain fields of hetero-epitaxial self-organized quantum dots, Chinese J. Functional Materials 36, 1261 (2005).
11. C. Pryor, M.-E. Pistol and L. Samuelson, Electronic structure of strained InP/GainP quantum dots, Phys. Rev. B 56, 10404 (1997).
12. H. Shin, W. Lee and Y.-H. Yoo, Effect of the stacking period on the strain field in InAs/GaAs quantum dots, Nanotechnology 14, 742 (2003).
13. G. Springholz, V. Holy, P. Mayer and M. Pinczolits, Self-organized ordering in self-assembled quantum dot superlattices, Mater. Sci. Engrg. B 88, 143 (2002).