SCOPUS 정보 검색 플랫폼

Chinese Physics B

Volumn 18, Issue 1, 2009, Pages 293-297

The effects of fast neutron irradiation on oxygen in Czochralski silicon

(5) Chen, Gui Feng a Yan, Wen Bo a Chen, Hong Jian a Li, Xing Hua a Li, Yang Xian a

a HEBEI UNIVERSITY OF TECHNOLOGY (China)

Author keywords

FTIR spectrometer; Irradiation defects; Neutron irradiation; Positron lifetime

Indexed keywords

AGGLOMERATION; ANNEALING; ATOMS; BINDING ENERGY; DEFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; FOURIER TRANSFORMS; NEUTRONS; OLIGOMERS; OXYGEN; OXYGEN VACANCIES; POSITRONS; RADIATION; RADIATION DAMAGE; SILICON; SPECTROMETERS; SPECTROMETRY; THREE DIMENSIONAL;

CZOCHRALSKI SILICONS; FAST NEUTRON IRRADIATIONS; FAST NEUTRONS; FOURIER TRANSFORM INFRARED SPECTROMETERS; FTIR SPECTROMETER; INTERSTITIAL OXYGEN CONCENTRATIONS; INTERSTITIAL SITES; IRRADIATION DEFECTS; ISOCHRONAL ANNEALING; OXYGEN ATOMS; POSITRON ANNIHILATION TECHNIQUES; POSITRON LIFETIME; SINGLE OXYGEN ATOMS; VACANCY CLUSTERS;

NEUTRON IRRADIATION;

EID: 62649153806 PISSN: 16741056 EISSN: None Source Type: Journal
DOI: 10.1088/1674-1056/18/1/047 Document Type: Article

Times cited : (9)

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