Behaviour of oxygen in CZ-silicon during 430-630°C heat treatment

Materials Science and Engineering B

Volumn B52, Issue 2-3, 1998, Pages 180-184

  Prakash, Om ^b   Upreti, N K ^a,b   Singh, Shyam ^b  

^a INSTITUTE OF WOOD SCIENCE AND TECHNOLOGY   (India)

^b G B PANT UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (India)

Author keywords

Activation energy; Dimers; Kinetics; New donors; Thermal acceptor; Thermal donors

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CONCENTRATION (PROCESS); DIFFUSION; MOLECULES; OXYGEN; REACTION KINETICS; SEMICONDUCTOR GROWTH; TEMPERATURE;

THERMAL ACCEPTOR; THERMAL DONORS;

SEMICONDUCTING SILICON;

EID: 0041169596     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(97)00280-8     Document Type: Article

References (10)

1. M.J. Binns, C.A. Londos, S.A. McQuaid, R.C. Newman, N.G. Semaltianos, J.H. Tucker, J. Mater. Sci. Mater. Electron. 7 (1996) 1.
2. S.M. Sze, J.C. Irvin, Solid State Electron. 11 (1968) 599.
3. T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, M. Watanake, J. Electrochem. Soc. 132 (1985) 1707.
4. T. Kumar, S. Singh, Bull. Electrochem. 10 (1994) 518.
5. Om Prakash, S. Singh, Indian J. Phys. A 69 (1995) 509.
6. A.R. Bean, R.C. Newman, J. Phys. Chem. Solids 33 (1972) 255.
7. V. Cascarra, P. Zunino, J. Appl. Phys. 51 (1980) 206.
8. S.A. McQuaid, M.J. Binns, C.A. Londos, J.H. Tucker, A. Brown, R.C. Newman, J. Appl. Phys. 77 (1995) 1427.
9. P. Gaworzewski, K. Schmalz, Phys. Stat. Solid. A 58 (1980) k223.
10. U. Gosele, T.Y. Tan, Appl. Phys. A 28 (1982) 79.