Epitaxial lateral growth of m-plane GaN and Al0.18Ga0.82N on m-plane 4H-SiC and 6H-SiC substrates

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 261-264

  Kawashima, T ^a   Nagai, T ^a   Iida, D ^a   Miura, A ^a   Okadome, Y ^a   Tsuchiya, Y ^a   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

A3. Organometallic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides

Indexed keywords

CATHODOLUMINESCENCE; EPITAXIAL GROWTH; NITRIDES; PHOTOLUMINESCENCE; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH CONDITIONS; ORGANOMETALLIC VAPOR PHASE EPITAXY; SELECTIVE EPITAXY;

GALLIUM NITRIDE;

EID: 33846548135     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.096     Document Type: Article

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