Determining the excess carrier lifetime in crystalline silicon thin-films by photoluminescence measurements

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Rosenits, Philipp ^a   Roth, Thomas ^a   Warta, Wilhelm ^a   Reber, Stefan ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES;

BULK RECOMBINATIONS; CRYSTALLINE SILICONS; CRYSTALLINE SUBSTRATES; CZOCHRALSKI; EPITAXIAL LAYER THICKNESS; MEASUREMENT AND ANALYSIS; MULTI-LAYER SYSTEMS; NON-DESTRUCTIVE MEASUREMENTS; PHOTO-LUMINESCENCE MEASUREMENTS; PHOTOLUMINESCENCE INTENSITIES; RADIATIVE RECOMBINATIONS; SURFACE AND INTERFACES; THIN-FILM; THIN-FILMS;

CARRIER LIFETIME;

EID: 62549146213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3080174     Document Type: Article

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