n-type emitter epitaxy for crystalline silicon thin-film solar cells

Progress in Photovoltaics: Research and Applications

Volumn 16, Issue 2, 2008, Pages 159-170

  Schmich, E ^a   Lautenschlager, H ^a   Friess T ^a   Trenkle, F ^a   Schillinger, N ^a   Reber, S ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Crystalline silicon; Doping; Emitter deposition; Epitaxy; High temperature CVD; Thin film solar cells

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; DOPING (ADDITIVES); SILICON COMPOUNDS; THIN FILMS;

CRYSTALLINE SILICON; EMITTER DEPOSITION; EMITTER EPITAXY; HIGH TEMPERATURE CVD; THIN FILM SOLAR CELLS;

SOLAR CELLS;

EID: 41049107870     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.783     Document Type: Article

References (24)

1. Beaucarne G, Agostinelli G, Carnel L, Choulat P, Dekkers H, Depauw V, Dross F, Duerinckx F, Gong C, Gordon I, Filipek IK, Ma Y, Posthuma NE, Gestel DV, Kerschaver EV, Nieuwenhuysen KV, Vermarien E, Poortmans J. Thin, thinner, thinnest: an evolutionary vision of crystalline Si technology. In Proceedings 21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, 2006; pp. 554-559.
2. Rentsch J, Bau S, Huljic DM. Screen-printed epitaxial silicon thin-film solar cells with 13.8% efficiency. Progress in Photovoltaics: Research and Applications 2003; 11: 527-534. DOI: 10.1002/pip.513
3. Biro D. PhD Thesis, Durchlaufdiffusion für die Photovoltaik, Freiburg, 2003.
4. Hurrle A, Reber S, Schillinger N, Haase J, Reichart JG. High throughput continuous CVD reactor for silicon deposition. In Proceedings 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, 2004; pp. 459-462.
5. Reber S, Dicker J, Huljic DM, Bau S. Epitaxy of emitters for crystalline silicon solar cells. In Proceedings 17th European Photovoltaic Solar Energy Conference and Exhibition, Munich, 2001; pp. 1612-1616.
6. Kurtz S, Friedman D, Geisz J, McMahon W. Using MOVPE growth to generate tomorrow's solar electricity. Journal of Crystal Growth 2007; 298: 748-753. DOI: 10.1016/j.jcrysgro.2006.10.176
7. Wang TH, Iwaniczko E, Page MR, Levi DH, Yan Y, Branz HM, Wang Q. Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells. Thin Solid Films 2006; 501: 284-287.
8. Rai-Choudhury P, Salkovitz EI. Doping of epitaxial silicon: equilibrium gas phase and doping mechanism. Journal of Crystal Growth 1970; 7: 353-360.
9. Rai-Choudhury P, Salkovitz EI. Doping of epitaxial silicon: effect of dopant partial pressure. Journal of Crystal Growth 1970; 7: 361-367.
10. Trumbore FA. Solid solubilities of impurity elements in germanium and silicon. The Bell System Technical Journal 1960; 39: 205-231.
11. Faller FR, Hurrle A. High temperature CVD for crystalline silicon thin-film solar cells. IEEE Transactions on Electron Devices 1999; 46(10): 2048-2054.
12. Reber S, Haase C, Schillinger N, Bau S, Hurrle A. The RTCVD160 - a new lab-type silicon CVD processor for silicon deposition on large area substrates. In Proceedings 3rd World Conference on Photovoltaic Energy Conversion, Osaka, 2003.
13. Herring RB. Handbook of Semiconductor Silicon Technology. Noyes Publications: Park Ridge, New Jersey, U.S.A.; 277-283.
14. Schmich E, Reber S, Willeke G. In-situ HCI etching for optical confinement in crystalline silicon thin-film solar cells. In Proceedings 20th European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, 2005; pp. 1383-1386.
15. 2. Journal of Applied Physics 1984; 56(8): 2225-2230.
16. Schultz O. PhD Thesis, High-efficiency multicrystalline silicon solar cells, Konstanz, 2005.
17. Secco d'Aragona F. Dislocation etch for (100) planes in silicon. Journal of the Electrochemical Society 1972; 119: 948-951.
18. Hees J. Diploma Thesis, Durchlauf-Siliziumepitaxie für kristalline Silizium - Dünnschichtsolarzellen, Hochschule Furtwangen, 2006.
19. Schmich E, Reber S, Hees J, Trenkle F, Schillinger N, Willeke G. Emitter epitaxy for crystalline silicon thinfilm solar cells. In Proceedings 21st European Photo-voltaic Solar Energy Conference and Exhibition, Dresden, 2006; pp. 734-737.
20. Schmich E, Reber S, Hees J, Lautenschlager H, Schillinger N, Willeke G. Epitaxy of emitters on p- and n-type substrates for crystalline silicon solar cells. In Proceedings 4th World Conference on Photovoltaic Energy Conversion, Hawaii, 2006; pp. 1111-1114.
21. Götzberger A, Voß B, Knobloch J. Sonnenenergie: Photovoltaik. B.G. Teubner: Stuttgart, 1993.
22. Schroder DK, Meier DL. Solar cell contact resistance a review. IEEE Transactions on Devices 1984; 31(5): 637-647.
23. Meier DL, Schroder DK. Contact resistance: its measurement and relative importance to power loss in a solar cell. IEE Transactions on electron devices 1984; ED-31(5): 647-653.
24. Schubert G. PhD Thesis, Thick film metallisation of crystalline silicon solar cells mechanisms, Models and Applications, University of Konstanz, 2006.