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Volumn 45, Issue 4, 1997, Pages 309-322

Contribution of silicon substrates to the efficiencies of silicon thin layer solar cells

Author keywords

Efficiency; Silicon substrate; Thin layer solar cells

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; DIFFUSION IN SOLIDS; ELECTRONS; PASSIVATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; TEXTURES;

EID: 0031069718     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(96)00074-8     Document Type: Article
Times cited : (5)

References (10)
  • 9
    • 0038937595 scopus 로고
    • Sandia Report SAND91-0516 Sandia National Laboratories, Albuquerque, NM
    • P.A. Basore, Installation Manual and Users Guide, Sandia Report SAND91-0516 (Sandia National Laboratories, Albuquerque, NM, 1992) pp. 21-26. Auger recombination coefficients are referenced from Swanson and Swirhun, Characterization of Majority and Minority Carrier Transport in Heavily Doped Silicon, Sandia National Laboratories contractor report, SAND87-7019 (Sandia National Laboratories, Albuquerque, NM, November 1987).
    • (1992) Installation Manual and Users Guide , pp. 21-26
    • Basore, P.A.1
  • 10
    • 85033122166 scopus 로고    scopus 로고
    • note
    • -3, a base diffusion length of 230 μm, and a front surface recombination velocity of 1000 cm/sec were used to match the material parameters and electrical performance of liquid phase epitaxy-based Cell 9S1 in Ref. [3].


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.