Threshold-voltage fluctuation of double-gated poly-Si nanowire field-effect transistor

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 243-245

  Hsu, Hsing Hui ^a   Lin, Horng Chih ^a   Chan, Leng ^a   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Double gate; Fluctuation; Nanowire (NW); Polycrystalline silicon (poly Si)

Indexed keywords

FIELD EFFECT TRANSISTORS; NANOWIRES; PASSIVATION; PLASMA APPLICATIONS; THIN FILM TRANSISTORS;

DOUBLE GATE; FLUCTUATION; NANOWIRE (NW); OPERATION MODES; PLASMA TREATMENTS; POLY-SI; POLYCRYSTALLINE SILICON (POLY-SI); SWITCHING BEHAVIORS; VOLTAGE FLUCTUATIONS;

POLYSILICON;

EID: 62549094822     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2011568     Document Type: Article

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